Impact of Structure, threshold voltage, and noise over the performance of pentacene based OFET: A Comparative Study

Abstract

Pentacene based organic field-effect transistors (OFETs) shows an adjustment in threshold voltage which is because of chemical processing in the organic polymer gate dielectric layer that is oxygen plasma treatment to explain this we demonstrate the comparison between OFET device1 untreated called control transistor and device2 determined by O2 plasma treatment in parylene surface. Pentacene organic field-effect transistor(OFET) consists of the top contact and bottom contact transistor. The top contact structure has high mobility and low contact resistance compared with the bottom contact structure. The organic semiconductor material is assessed with functional parameters like mobility, which tells how fast the electrons or hole moves within the semiconducting layer. The organic transistor has a critical role to play in the application of organic electronic devices, which are used in our day to day life. The application of OFET involves the merging of printed electronic and organic transistors, which lead to low cost, mass, and large scale producers. Variation of noise magnitude, which depends on drain current is because of photocurrent excitation and the carrier trapped in the boundary of dielectric and semiconductor, which is due to UV-ozone treatment.